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LI Zhanxiang, YUE Hongwei, WU Chaofei, GONG Quanxi. Design of a S band low noise amplifier[J]. Journal of Guilin University of Electronic Technology, 2018, 38(6): 442-447.
Citation: LI Zhanxiang, YUE Hongwei, WU Chaofei, GONG Quanxi. Design of a S band low noise amplifier[J]. Journal of Guilin University of Electronic Technology, 2018, 38(6): 442-447.

Design of a S band low noise amplifier

  • In order to speed up the design process of the low noise amplifier.Basing on the microstrip impedance matching technique, a low noise amplifier used in 2.2~2.3 GHz is designed by using ADS software. HEMT ATF-34143 of Agilent Company was used in this amplifier system. A two-stage topology was used to reach the requirement of the noise coefficient and high gain. In order to improve efficiency of the design, combing the bias circuit design with stability design is proposed. The simulated results show that the gain of the amplifier is more than 23 dB, the noise figure is less than 0.6 dB, input and output VSWR of the amplifier is less than 1.2.
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