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HU Danhui, LIN Qian, WU Haifeng, CHEN Siwei, WANG Xiaozheng, JIA Lining. Research on the development trend of semiconductor technology: take the RF power amplifier as an example[J]. Journal of Guilin University of Electronic Technology, 2023, 43(4): 271-281.
Citation: HU Danhui, LIN Qian, WU Haifeng, CHEN Siwei, WANG Xiaozheng, JIA Lining. Research on the development trend of semiconductor technology: take the RF power amplifier as an example[J]. Journal of Guilin University of Electronic Technology, 2023, 43(4): 271-281.

Research on the development trend of semiconductor technology: take the RF power amplifier as an example

  • Based on the analysis of radio frequency power amplifier (RF PA) semiconductor materials and chip research status, the development trend of semiconductor technology is summarized. Through the analysis of the characteristics of semiconductor materials and the performance indicators of PA chips, it is found that three generations of semiconductor materials have advantages and disadvantages, which can be applied in different scenarios according to the needs to achieve common progress and coordinated development. With the gradual reduction of PA chip area and increasing frequency, the research on third-generation semiconductor materials and silicon-based composite power amplifiers will be a hot spot in the future. In order to further accelerate the research process of PA, 5 development trends of semiconductor technology are summarized through literature research, which provides an important reference for the performance improvement and technological development of RF PA, which can help our country break through the barriers of foreign manufacturers and further enhance the core competitiveness in the field of electronic information and chip research development, and lay a certain foundation.
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