Research on the preparation of MoS₂ memristor by CVD and its memristive properties

Two-dimensional transition metal dichalcogenides (TMDs) exhibit unique physical and chemical properties, which show great potential for applications in optoelectronic devices across various fields. However, due to the growth conditions of TMDs materials, high-integration TMDs devices still face significant challenges in micro-nano fabrication processes. This study proposes a method to add a metal capping layer between the metal precursor (transition metal) and the metal bottom electrode to mitigate the film degradation caused by high temperature and sulfur vapor environments during the chemical vapor deposition growth of TMDs films. Experimental results show that the addition of the metal capping layer effectively suppresses issues such as perforation, wrinkles, and shrinkage, which occur due to high temperature, compared to samples without the capping layer. Raman testing confirms that the films fabricated from the Mo precursor under high-temperature sulfur vapor conditions are multilayer stacked MoS₂. Furthermore, the Ag/Si/MoS₂/Mo/Au memristor fabricated based on this structure demonstrates excellent electrical performance. Electrical tests reveal resistance switching voltages of 1.4 and −1.3 V, with a switching cycle of up to 200 times, a high-to-low resistance ratio greater than 10², and a retention time of 2600 s. Fitting analysis of the device's I-V curve indicates that it follows the space charge limited conduction mechanism, and the resistance switching mechanism is mainly attributed to the growth and melting of the Ag conductive filaments. The in-situ growth of TMDs films on metal electrodes and the development of vertical memristor fabrication based on this method provide new approaches for exploring high-performance memristors and constructing high-integration arrays.