Abstract: To achieve a low temperature coefficient (TC) in a wide temperature range, a high precision voltage reference source with voltage compensation mode structure was designed, The temperature of the reference voltage was compensated by the difference of the gate source voltage differential pairs. Under the effect of the gate source voltage difference between the two MOS transistors working in the sub-threshold region, the resistance in the linear region of MOS transistors generates a bias current with low temperature drift coefficient, and the reference voltage was generated by transistors under different standard voltages. Based on the 180nm CMOS device model, the circuit was designed, simulated and compared on cadence. The results show that when the temperature was -25 ℃ to 150 ℃, the temperature coefficient was 3.91 ppm /℃; and the voltage line regulation reached 0.58% in the range of 1.3 V to 3.3 V supply voltage; At 100 Hz, the PSRR is -63.5 dB; the power dissipation was only 115.7 nW, and the chip area was 0.0054 mm².