• 中国期刊全文数据库
  • 中国学术期刊综合评价数据库
  • 中国科技论文与引文数据库
  • 中国核心期刊(遴选)数据库
田磊, 戴培邦, 张倍铭. OPS/ZIF-67/PI复合材料薄膜的制备与性能[J]. 桂林电子科技大学学报, 2024, 44(5): 505-510. DOI: 10.16725/j.1673-808X.2022335
引用本文: 田磊, 戴培邦, 张倍铭. OPS/ZIF-67/PI复合材料薄膜的制备与性能[J]. 桂林电子科技大学学报, 2024, 44(5): 505-510. DOI: 10.16725/j.1673-808X.2022335
TIAN Lei, DAI Peibang, ZHANG Beiming. Preparation and properties of OPS/ZIF-67/PI composite material film[J]. Journal of Guilin University of Electronic Technology, 2024, 44(5): 505-510. DOI: 10.16725/j.1673-808X.2022335
Citation: TIAN Lei, DAI Peibang, ZHANG Beiming. Preparation and properties of OPS/ZIF-67/PI composite material film[J]. Journal of Guilin University of Electronic Technology, 2024, 44(5): 505-510. DOI: 10.16725/j.1673-808X.2022335

OPS/ZIF-67/PI复合材料薄膜的制备与性能

Preparation and properties of OPS/ZIF-67/PI composite material film

  • 摘要: 集成电路的发展要求材料具有低介电常数,可通过添加纳米空洞材料降低聚合物的介电常数。以3,3′,4,4′-联苯四甲酸二酐(BPDA)、4,4′-二氨基二苯醚(ODA)合成的聚酰亚胺(PI)为基体,引入ZIF-67、OPS为纳米填料,制备ZIF-67/PI、OPS/PI、OPS/ZIF-67/PI复合材料薄膜。通过傅里叶变换红外光谱、扫描电子显微镜、X射线衍射仪对ZIF-67及上述3种复合材料薄膜进行表征,研究ZIF-67、OPS的含量对复合材料薄膜热稳定性与介电性能的影响。实验结果表明:当添加一定质量分数的ZIF-67与OPS时,OPS/ZIF-67/PI复合材料薄膜的热稳定性较PI有所下降,但是其分解温度仍大于440 ℃,具有较好的热稳定性;OPS/ZIF-67/PI复合材料薄膜的介电常数低于纯PI薄膜,当OPS的质量分数为5%、ZIF-67的质量分数为7%时,OPS/ZIF-67/PI复合材料薄膜的介电常数为0.69(1 kHz),相对于ZIF-67添加量为7%的ZIF-67/PI复合材料薄膜的介电常数(1.65,1 kHz)下降了58.2%,相对于OPS添加量为5%的OPS/PI复合材料薄膜的介电常数(2.52,1 kHz)下降了72.6%,相对于纯PI(2.98,1 kHz)下降了76.8%。当添加一定质量分数的OPS与ZIF-67时,复合材料薄膜的介电损耗略微增加。

     

    Abstract: The development of integrated circuits requires materials with low dielectric constant materials, and the dielectric constant of polymers can be reduced by adding nanocavity materials in. Polyimide (PI) synthesized by 3,3′,4,4′-biphenyltetracarboxylic dianhydride (BPDA) and 4,4′-diaminodiphenyl ether (ODA) was used as the matrix, and ZIF-67 and OPS were introduced as nano-fillers to prepare ZIF-67/PI, OPS/PI, and OPS/ZIF-67/PI composite films. The ZIF-67 and the above three composite films were characterized by Fourier transform infrared spectroscopy, scanning electron microscopy and X-ray diffractometer to study the effects of the contents of ZIF-67 and OPS on the thermal stability and dielectric properties of the composite films. The experimental results showed that the thermal stability of OPS/ZIF-67/PI composite films decreased compared with that of PI when a certain mass fraction of ZIF-67 and OPS were added, but their decomposition temperature was still greater than 440 ℃, which had good thermal stability; the dielectric constant of OPS/ZIF-67/PI composite films was lower than that of pure PI films when the mass fraction of OPS was When the mass fraction of OPS is 5% and the mass fraction of ZIF-67 is 7%, the dielectric constant of OPS/ZIF-67/PI composite film is 0.69 (1 kHz), which is 58.2% lower than the dielectric constant of ZIF-67/PI composite film with 7% ZIF-67 addition (1.65, 1 kHz), and the dielectric constant of OPS/PI composite film with 5% OPS addition is 58.2% lower than the dielectric constant of ZIF-67/PI composite film with 7% ZIF-67 addition. The dielectric constant of the composite film (2.52, 1 kHz) decreased by 72.6% relative to that of the pure PI (2.98, 1 kHz), and by 76.8% relative to that of the pure PI (2.98, 1 kHz). The dielectric loss of the composite films increased slightly when a certain mass fraction of OPS with ZIF-67 was added.

     

/

返回文章
返回