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李富聪, 白小波, 冯保全, 等. 铁掺杂GeTe的热压法制备及热电性能J. 桂林电子科技大学学报, 2026, 46(1): 90-97. DOI: 10.16725/j.1673-808X.202379
引用本文: 李富聪, 白小波, 冯保全, 等. 铁掺杂GeTe的热压法制备及热电性能J. 桂林电子科技大学学报, 2026, 46(1): 90-97. DOI: 10.16725/j.1673-808X.202379
LI Fucong, BAI Xiaobo, FENG Baoquan, et al. Preparation and thermoelectric properties of Fe-doped GeTe by hot pressing methodJ. Journal of Guilin University of Electronic Technology, 2026, 46(1): 90-97. DOI: 10.16725/j.1673-808X.202379
Citation: LI Fucong, BAI Xiaobo, FENG Baoquan, et al. Preparation and thermoelectric properties of Fe-doped GeTe by hot pressing methodJ. Journal of Guilin University of Electronic Technology, 2026, 46(1): 90-97. DOI: 10.16725/j.1673-808X.202379

铁掺杂GeTe的热压法制备及热电性能

Preparation and thermoelectric properties of Fe-doped GeTe by hot pressing method

  • 摘要: GeTe是一种具有优异热电性能的材料,因其热电性能高和适应环境强的特点而被认为是目前商业化替代中温区热电材料的理想候选者之一,但GeTe中存在的Ge富集现象导致其本征zT值不高。为了改善碲化锗热电性能,用热压法制备GeTe并进行铁掺杂来提升GeTe的热电性能并进一步观察评估其材料性能,运用第一性原理计算方法分析其电子结构和能带,使用电子探针(EBS)获得晶体微观结构,并分析其热导率随晶体结构的变化情况。模拟计算和热电性能测试结果均表明,铁掺杂能促进碲化锗能带结构优化并增加声子散射,可显著提高碲化锗热电性能;在掺杂质量2%铁粉后,所得样品具有最佳的热电性能,温度为680 K时具有最高的zT值,约为1.57,相对于本征GeTe提高约50%。Fe掺杂GeTe通过优化热导率大幅改善了GeTe热电性能,是一种理想的热电材料。

     

    Abstract: GeTe is a thermoelectric material with excellent performance and is considered a promising candidate for commercial applications in the medium-temperature range due to its high thermoelectric efficiency and environmental adaptability; however, the presence of Ge enrichment in GeTe results in a low intrinsic zT. To improve the thermoelectric properties of germanium telluride, GeTe was prepared by the hot-pressing method and iron was doped to enhance its thermoelectric properties and to further observe and evaluate its material properties. First-principles calculations were applied to analyze its electronic structure and energy bands, the crystal microstructure was obtained using electron microprobe (EBS), and the variation of thermal conductivity with crystal structure was analyzed. Both simulations and thermoelectric measurements show that Fe doping can promote the optimization of the energy band structure and increase the phonon scattering of germanium telluride, which can significantly improve the thermoelectric properties of germanium telluride, and the resulting sample has the best thermoelectric properties after doping with 2% Fe powder by mass, with the highest thermoelectric optimum (zT) value of about 1.57 at a temperature of 680 K, which is approximately 50% higher than that of intrinsic GeTe. Fe is an ideal thermoelectric material for GeTe, as the thermal performance has been greatly improved by optimizing the thermal conductivity.

     

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