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田亚峰, 梁馨元, 银珊. 基于太赫兹超表面的振幅调制和角度传感功能复用器件[J]. 桂林电子科技大学学报, 2024, 44(4): 396-400. DOI: 10.16725/j.1673-808X.202350
引用本文: 田亚峰, 梁馨元, 银珊. 基于太赫兹超表面的振幅调制和角度传感功能复用器件[J]. 桂林电子科技大学学报, 2024, 44(4): 396-400. DOI: 10.16725/j.1673-808X.202350
TIAN Yafeng, LIANG Xinyuan, YIN Shan. Metasurface-based terahertz functional multiplexing device for amplitude modulation and angle sensing[J]. Journal of Guilin University of Electronic Technology, 2024, 44(4): 396-400. DOI: 10.16725/j.1673-808X.202350
Citation: TIAN Yafeng, LIANG Xinyuan, YIN Shan. Metasurface-based terahertz functional multiplexing device for amplitude modulation and angle sensing[J]. Journal of Guilin University of Electronic Technology, 2024, 44(4): 396-400. DOI: 10.16725/j.1673-808X.202350

基于太赫兹超表面的振幅调制和角度传感功能复用器件

Metasurface-based terahertz functional multiplexing device for amplitude modulation and angle sensing

  • 摘要: 太赫兹器件在太赫兹技术发展中具有重要作用,现有的太赫兹器件存在功能单一、集成度低等问题。基于太赫兹超表面设计了一种可同时实现振幅调制和角度传感的功能复用器件。该器件由顶层的U形金属环阵列和蓝宝石衬底组成,结构简单,使用方便。通过斜入射和不对称结构同时作用引入相位差,以增强Fano谐振,提升器件性能。在斜入射条件下,该器件对于透射振幅的调制深度最高可达79.3%,左右2个谐振峰峰位频率差最大可达92.7 GHz,角度传感灵敏度为0.989 5 GHz/(°),振幅调制和角度传感效果明显。所设计的新型功能复用器件有利于太赫兹器件的集成化,为超表面在调制器和传感器等领域的实际应用提供了新思路和新途径。

     

    Abstract: Terahertz devices play an important role in the development of terahertz technology. Existing terahertz devices have the problems of single function and low integration. Based on terahertz metasurface, a functional multiplexing device was proposed which can realized amplitude modulation and angle sensing simultaneously. The device is composed of a U-shaped metal ring array on the top layer and a sapphire substrate, which is simple in structure and easy to use. The phase difference is introduced by oblique incidence and asymmetric structure, and the Fano resonance is enhanced to improve the device performance. Under the oblique incidence condition, the modulation depth of transmission amplitude can reach 79.3%, the frequency difference between the left and right resonant peaks can reach 92.7 GHz, and the sensitivity of angle sensing is 0.989 5 GHz/(°). The perfomances of amplitude modulation and angle sensing are excellent. The new functional multiplexing device is beneficial to the integration of terahertz devices and provides a new way for the practical application of metasurfaces in modulator and sensor fields.

     

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