Abstract: Schottky diodes are considered as core devices in the terahertz field with diverse applications in terahertz frequency doubling and mixing circuits. Carbon nanotubes have emerged as an ideal channel semiconductor material for terahertz Schottky diodes due to their excellent electrical properties, one-dimensional dimensionality, and stable structure. The development of carbon nanotube Schottky diodes is crucial for the advancement of terahertz technology. This paper commences with an introduction of the intrinsic advantages and material preparation techniques of carbon nanotubes. Furthermore, it discusses the research progress and achievements of carbon nanotube Schottky diodes both domestically and internationally, thereby demonstrating the potential of carbon nanotube Schottky diodes in the terahertz technology field. Finally, the manuscript summarizes the challenges and issues faced in the research process of carbon nanotube terahertz Schottky diodes and provides a prospective outlook on the development direction of carbon-based terahertz technology.